Session Index

Optical Design and Testing

Student Paper Award Session I
Thursday, Dec. 7, 2017  13:00-14:45
Presider: Ching-Cherng Sun
Room: International Research Building IR6002-A(6F)
13:00 - 13:45 Paper No.  2017-THU-S0501-I001
Invited Speaker:
Virendra Mahajan
Wavefront analysis in optical design, fabrication, and testing
Virendra Mahajan


13:45 - 14:00 Paper No.  2017-THU-S0501-O001
An-Jie Liang Award Candidate Development of Heterodyne Reflective Laser Encoder for Displacement Measurement
An-Jie Liang;Hung-Lin Hsieh;Bo-yen Sun

This study presents a heterodyne reflective laser encoder for precision in-plane displacement measurement. The proposed system combines the merits of grating interferometry, heterodyne interferometry, and reflective optical path design, achieving high resolution and high stability. Experiments prove that the system can reach nanometer level resolution.

14:00 - 14:15 Paper No.  2017-THU-S0501-O002
Yi-Hsuan Lan Award Candidate Design and Fabrication of Compact Spectrometer based on Gradient Grating Period Guided-Mode Resonance Filter
Yi-Hsuan Lan;Hsin-Yun Hsu;Cheng-Sheng Huang

We designed and fabricated a compact spectrometer based on a gradient grating period guided-mode resonance filter. The GGP-GMRF is less than 2.5 mm and consisted of gradient gratings periods in 2-nm increments. Two different light sources were used to verified the spectra reconstruction for the wavelength range of 500–700 nm.

14:15 - 14:30 Paper No.  2017-THU-S0501-O003
Chih-En Wang Award Candidate Low Sensitive to Radiation Superfluorescent Light Source with Negligible Thermal Coefficient
Chih-En Wang;Hsiang Wang;Tsung-Yu Lu;Chia-Ju Lin;Shien-Kuei Liaw;Ren-Young Liu

An Erbium-doped, fiber-based, broadband superfluorescent fiber source (SFS) is demonstrated with low mean wavelength drift of 1.26 ppm/°C from 0 °C to 60 °C. The output power is 9.63 dBm with 3 dB bandwidth of 16.8 nm from 0 to 30 krad of 60CO γ ray radiation.

14:30 - 14:45 Paper No.  2017-THU-S0501-O004
Hong Bo-Syun Award Candidate Optical Properties of InGaN Light-Emitting Diodes with an AlGaN/Porous-GaN Distributed Bragg Reflector
Hong Bo-Syun;Tsao Hui-Wen;Chen Yi-Yun;Tsai Tsung-Lian;Lin Chia-Feng

InGaN LED with a u-AlGaN/porous-GaN distributed Bragg reflector (DBR) has been demonstrated. Porous-GaN layers were fabricated through a selective electrochemical etching process. Central wavelength and reflectivity of the DBR were measured at 456nm and 87%. Optical and solar properties of the InGaN LED with the porous DBR structure were analyzed.