Session Index

Solid State Lighting

Solid State Lighting I
Thursday, Dec. 7, 2017  13:00-14:45
Presider: Hao-Chung Kuo
Room: International Research Building IR5034(5F)
13:00 - 13:30 Paper No.  2017-THU-S0801-I001
Invited Speaker:
James S. Speck
Development of High Performance (0001) LEDs: Tunnel Junctions and Green LEDs
James S. Speck

"In this presentation, we highlight two recent areas of development of high performance c-plane GaN-based LEDs Tunnel Junctions: Efficient tunnel junctions (TJ) provide a means of carrier conversion between p-type and n‐type material in semiconductor devices and are potentially advantageous for the III‐Nitride material system, where the poor conductivity of p‐GaN impacts the design and efficiency of light emitting and laser diodes (LEDs and LDs). We have developed a technologically viable hybrid growth approach that involves growing the active region of devices and top p‐GaN layers by the standard (MOCVD) growth technique, followed by growth of the highly doped n-side of the TJ by ammonia‐assisted molecular beam epitaxy. We have successfully realized high performance VCSELS, edge emitting laser diodes, and LEDs. For LEDs the high conductivity and low optical loss of n-type GaN enables new designs that effectively increase the light extraction efficiency. We present c-plane 450 nm LEDs with a peak EQE and WPE of 76% and 73%, respectively.Green LEDs: We demonstrate very high luminous efficacy MOCVD growth of green light-emitting diodes that employ high temperature InGaN QW growth immediately followed by an Al0.30Ga0.70N cap layer and then a higher temperature GaN barrier. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/W, respectively. "

13:30 - 13:45 Paper No.  2017-THU-S0801-O001
Jiun-Woei Huang The design of uniform light source of UV LED for directing writing lithography
Jiun-Woei Huang;Luh-hua Chen

The illumination design is for a PC board aligner. Koehler illumination is applied to transfer from the wide divergent angle and non-uniform source to the smallest divergent angle and uniform source.

13:45 - 14:00 Paper No.  2017-THU-S0801-O002
Zi-Xuan You 2-Gbit/s of Photonic Crystal Light-emitting Diodes on Visible Light Communication
Zi-Xuan You;Tung-Ching Lin;Jian-Jang Huang

GaN based light-emitting diodes (LEDs) have shown its potential on visible light communication (VLC). However, the bandwidth is always the bottleneck for LEDs on high-speed application. In this work, we proposed 2-Gbps data rate of GaN based LEDs with photonic crystal (PhC) structure which improves the performance of VLC system.

14:00 - 14:15 Paper No.  2017-THU-S0801-O003
Tzu-Yu Chen White Light-Emitting Diode with Excellent Color Quality based on Liquid type Nontoxicity Photoluminescent Nano-materials
Tzu-Yu Chen;Hao-Chung Kuo

White-light-emitting diodes fabricated by Nontoxic nanomaterials graphene ,porous silicon quantum dots , which could achieve high color rendering index 95 and high-brightness. Liquid-type white LED structure reduce surface temperature and improves the luminous efficiency. Distributed Bragg reflector can enhance it by incorporating the brightness of an LED.

14:15 - 14:30 Paper No.  2017-THU-S0801-O004
Chih-Ming Weng Wavelength Tunable InGaN/GaN Nano-ring Light-emitting Diodes by Nanosphere Lithography
Chih-Ming Weng;Hao-Chung Kuo

Nano-ring light emitting diodes with different wall width demonstrates that the effective bandgaps can be tuned by reducing the strain inside the active region. This research shows the NRLEDs devices with four-color emission on the same wafer.

14:30 - 14:45 Paper No.  2017-THU-S0801-O005
Huang Che Hsuan High efficiency and low assemble-dependent chip-scale package for white light-emitting diodes
Huang Che Hsuan

This study presents the chip-scale package (CSP) structure with the conformal and uniform structure for white LED in lighting and BLU applications. The simulated results show that the CSP structure enhances the efficacy from SMD type by 8.81% and 9.43% at lighting and BLU applications respectively.