Session Index

Solid State Lighting

Solid State Lighting IV
Friday, Dec. 8, 2017  13:00-14:30
Presider: Chia-Yen Huang
Room: International Research Building IR5034(5F)
Notes:
13:00 - 13:30 Paper No.  2017-FRI-S0803-I001
Invited Speaker:
Hideto Miyake
Fabrication of high-quality AlN on sapphire be face-to-face annealingFabrication of high-quality AlN on sapphire be face-to-face annealing
Hideto Miyake

The annealing of sputtered AlN films with different thicknesses grown on sapphire in nitrogen ambient was investigated. In the annealing, two AlN films on sapphire were overlapped “face-to-face” to suppress the thermal decomposition of the AlN films. The sputtered AlN films with small grains consisted of columnar structure were initially aligned with (0002) orientation but became slightly inclined with increasing film thickness resulting in the formation of a two-layer structure. After annealing, films became a single crystalline layer regardless of the film thickness, and their crystallinity markedly improved after annealing at 1700 oC. The full widths at half maximum of the (0002)- and (10-12)-plane X-ray rocking curves were improved to 30-50 and 200-250 arcsec, respectively.This work was partially supported by JSPS KAKENHI Grant Numbers 15H03556 and 16H06415, and JST CREST No. 16815710, JST SICORP InRel-NPower – EU H2020 No. 720527, and JST SICORP with MOST in China.

 
 
13:30 - 13:45 Paper No.  2017-FRI-S0803-O001
I-Chen Tseng High-Speed 2x2 Integrated Micro-LED Array for Visible Light Communication
I-Chen Tseng;Hao-Yu Lan;Chao-Hsin Wu

The high-speed blue micro-LEDs employed in a 2x2 integrated array configuration can achieve much higher light-output (3.3x) without sacrificing the speed (280 MHz). We will discuss the dc and high-speed characteristics and the eye diagram of the single micro-LED and the micro-LED array

 
 
13:45 - 14:00 Paper No.  2017-FRI-S0803-O002
Yao-Pin Wang GaN-based vertical-cavity surface-emitting lasers operating at high temperature
Tien-Chang Lu;Yao-Pin Wang

We demonstrated GaN-based VCSELs operating at high temperature. The VCSELs contain double dielectric DBRs and epitaxial layers deposited on c-plane sapphire substrates that are bonded to silicon substrates with p-side-down configuration, contributing to better heat dissipation. The temperature dependent lasing characteristics revealed that the VCSELs can sustain to 350K.

 
 
14:00 - 14:15 Paper No.  2017-FRI-S0803-O003
Yu-Wei Hsu Grating-Based Tunable Laser by Using Cr4+:YAG Crystal Fiber as Gain Media
Yu-Wei Hsu;Dong-YO Jheng

Tunable laser from 1399 to 1514 nm was demonstrated with the Cr4+:YAG fiber. The laser output wavelength was tuned by rotating a grating. We also proposed designs of high-index-glass-clad Cr4+:YAG crystal fibers which can achieve few-mode guiding at the wavelength 1.64 μm.

 
 
14:15 - 14:30 Paper No.  2017-FRI-S0803-O004
Yu-Cheng Shen Optical Model for QD-LEDs
Yu-Cheng Shen;Yao-Chung Hsiao;Tsung-Hsun Yang;Yeh-Wei Yu;Ching-Cherng Sun

In this work, we have extensively explored the optical emission of the red quantum dots illuminated by blue LED die. The emission spectra of the QDs are found of red shifting as the concentrations of the QDs increasing. We conclude an empirical model for the red shifting.