Session Index

Thin-Film Technology and Optical Engineering

Thin-film Device
Friday, Dec. 8, 2017  08:30-10:15
Presider: Ann-Kuo Chu
Room: International Research Building IR1002(1F)
Notes:
08:30 - 09:00 Paper No.  2017-FRI-S1003-I001
Invited Speaker:
George Chang
Browave Corporation,VP,Sales & Marketing
George Chang

In NG-PON2, it is defined to use a WM device to multiplex the L band downstream and demultiplex the C band upstream at OLT,the critical issue is that the loss budget is tight in the system, WM device powered by Free Space Matrix can help to improve for that. Besides, considering A grade connector applied in the system can help on loss budget too.

 
 
09:00 - 09:15 Paper No.  2017-FRI-S1003-O001
Chun-Chuan Yang High-performance gas sensors using atomically thin-layered MoS2 on patterned sapphire substrates
Chun-Chuan Yang;Hao-Chung Kuo

We demonstrated the significant improvement in NO gas sensing by enhancing the UV light absorption and surface-to-volume ratio of MoS2 sensors via patterned sapphire substrates. The results suggests a viable method towards to high-performance gas sensors based on atomically thin-layered MoS2.

 
 
09:15 - 09:30 Paper No.  2017-FRI-S1003-O002
Chun-How Tang Passivated Contact Application for Silicon based Photodetector
Chun-How Tang

This study grows the oxide layer in different methods, and then stacks the silicon nitride on the oxide layer to enhance the overall passivation effect. The experimental results show that the passivated contact can measure the maximum lifetime is 1515us, iVoc is 650mV at annealing 400 degrees.

 
 
09:30 - 09:45 Paper No.  2017-FRI-S1003-O003
Yi-Ming Chu The development of P-type transparent conductive tin monoxide thin films
Yi-Ming Chu

In this work, high performance p-type SnO thin films are developed on glass by RF magnetron sputtering at room temperature and annealed in nitrogen ambient. The results show the superior electrical characteristics for the p-type SnO films deposited at Ar/O2 = 15/1 with post-deposit annealing temperature at 350 ° C.

 
 
09:45 - 10:00 Paper No.  2017-FRI-S1003-O004
Wei-Chien Wang Transmission induced hyperbolic metamaterial as a compact polarizer
Yi-Jun Jen;Yi-Ciang Jhang;Wei-Chien Wang;Kai-Lun Wu;Hou-Lon Cheang

In this work, a metal-dielectric symmetrical film stack is adopted to tailor the p-polarized equivalent admittance to match to that of cover medium as a polarizer when the light is incident obliquely. The idea of admittance matching is realized in the normalized admittance diagram.

 
 
10:00 - 10:15 Paper No.  2017-FRI-S1003-O005
Tai-Jun Wang Fabrication of ZrO2 Resistive Memory by Using a Sol-Gel Method
Tai-Jun Wang;Chih-Chieh Hsu;Che-Chang Tsao

A novel and simple process to fabricate a high-performance ZrO2 resistive random access memory (ReRAM) was proposed. After annealing at 400 oC for 1 hour. The ZrO2 ReRAM exhibits a stable resistive switching characteristic and the resistive window is ~ 103.