Session Index

Solid State Lighting

Solid State Lighting II
Thursday, Dec. 7, 2017  15:15-17:00
Presider: Tien-Chang Lu
Room: International Research Building IR5034(5F)
15:15 - 15:30 Paper No.  2017-THU-S0802-O001
Chia-Yen Huang Spectrally-pure deep-UV electroluminescence on thick AlGaN template with an improved surface morphology
Chia-Yen Huang;Kai-Hsiang Chang;Xi-Cheng Huang;Ray-Ming Lin;Hao-Chung Kuo

: We demonstrated a AlGaN-based light-emitting diode epitaxial structure with spectrally-pure electroluminescence. The key element is to maintain the surface morphology after growing a micron-thick n-AlGaN as the n-contact layer. The growth conditions and interfacial treatment of multiple-quantum-wells have a strong influence on the suppression of defect luminescence.

15:30 - 15:45 Paper No.  2017-THU-S0802-O002
Hung-Hsiang Chen 2D Transport Modeling and Optimization of p-type AlGaN Supper Lattice for Deep UV Light Emitting Diodes
Hung-Hsiang Chen;Yuh-Renn Wu

For a 280nm UVLED, p-AlGaN super lattice (SL) is used as the contact layer to decrease light absorption and a pattern structure is used to enhance the light extraction. An optimized UVLED structure is found to improve contact and remained transparent for UVLEDs.

15:45 - 16:00 Paper No.  2017-THU-S0802-O003
Shih-Kang Lin White LEDs with Correlated color temperature Self-Balancing Mechanism from Turn-on Stage to Thermal Equilibrium
Shin-Mei Wu;Shih-Kang Lin;Tsung-Hsun Yang;Benoit Glorieux;Xuan-Hao Lee;Ching-Yi Chen;Yu-Yu Chang;Yeh-Wei Yu;Ching-Cherng Sun

We propose a method that can inhibit CCT drift by finding a well match design between the blue die and the phosphor for the unavoidable thermal effect. The method is a passive way to keep self-balancing between the blue and yellow lights in the normal operation duration.

16:00 - 16:15 Paper No.  2017-THU-S0802-O004
Chih-Ching Cheng Integration of Gallium Antimonide Structures on Silicon Substrate by Rapid Melt Growth Method
Chih-Ching Cheng;Jing-Wen Jheng;Yi-Hsun Chen;Cheng-Yu Lin;Chih-Kuo Tseng;Yin-Jui Chen;Keh-Yung Cheng;Kuang-Chien Hsieh;Ming-Chang M. Lee

Structures made of III-V semiconductor Gallium Antimonide (GaSb) integrated on silicon substrate by Rapid Melt Growth (RMG) method are investigated. Due to the small electronic bandgap (0.72 eV), GaSb could be an ideal material to implement an integrated light source for silicon photonics.

16:15 - 16:30 Paper No.  2017-THU-S0802-O005
Chih-Hao Lin High Quality Liquid-type White Light-Emitting Diode with Zn0.8Cd0.2S White Quantum Dots
Chih-Hao Lin;Chin-Wei Sher;Huang-Yu Lin;Subadra Kamankottai Balasekaran;Hao-Chung Kuo

This study demonstrates a colloidal ternary Zn0.8Cd0.2S white quantum dots prepared by chemical route and dispersed in xylene liquid-type WQD solution integrates it with standard UV-LED to form liquid-type WQD-WLED. High efficiency, high color quality and excellent reliability of LWQD-WLED with neutral white CCT can be obtained.