Session Index

Photovoltaic Technology

Poster Session I
Thursday, Dec. 7, 2017  12:30-14:00
Presider: -
Room: International Research Building 5F
Paper No.  2017-THU-P0901-P001
Jia Xing Li Award Candidate Ultrafast Carrier Dynamics in Perovskite Solar Cells under Light Irradiation
Jia Xing Li;Tzu Pei Chen

Here we present the implications of energy transfer in photoinduced degradation of perovskite solar cells by discussing the hot carrier relaxation via broadband femtosecond pump-probe spectroscopy.

Paper No.  2017-THU-P0901-P002
Shih-Yuan Chen Award Candidate Application of high-performance Ti-doped GaZnO transparent conducting thin films on CIGS solar cells
Shih-Yuan Chen

This study reports that the improved optoelectronic characteristics and crystallite quality of GZO film through titanium doping forming the novel Ti-doped GaZnO (GTZO) transparent conductive oxide (TCO) thin films for the TCO application on CIGS solar cells. These thin films are highly favorable and pronouncedly contribute to the performance improvement for solar cell devices.

Paper No.  2017-THU-P0901-P003
Yung-Hao Wang Award Candidate Application of Two Novel Dye Molecules with Donor-Acceptor-Acceptor Configuration as donor in Organic Photovoltaics
Yung-Hao Wang;Ken-Tsung Wong;Yi-Nan Lin;Ya-Ze Li;Chun-Kai Wang;Sajal Biring;Jing-Lin Hsieh;Meng-Zhen Li;Shun-Wei Liu;Chih-Chien Lee;Yi-Hau Li

In this letter, the authors present a highly efficient small-molecule organic photovoltaics with a donor-acceptorbulkheterojunction as the active layer. Thedevicesexhibithighest power conversion efficiency of 8.01%, the open circuit voltage of 0.96 V, the short-circuit current density of 14.12 mA/cm2, and the fill factor of 60.37%.

Paper No.  2017-THU-P0901-P004
Chia-Hsun Chen Award Candidate Hole Mobility of 9,10-Di-(2’- naphthyl) anthracene with Metal-Insulator-Semiconductor Charge Extraction by Linearly Increasing Voltage Measurement
Chia-Hsun Chen;Tien-Lung Chiu;Chi-Feng Lin;Jiun-Haw Lee

Hole mobility (uh) of 9,10-Di-(2’- naphthyl) anthracene (ADN) was measured with metal–insulator– semiconductor charge extraction by linearly increasing voltage method, which was uh=8.37*10-6 cm2/Vs at the electric field of 0.4M V/cm.

Paper No.  2017-THU-P0901-P005
Teja Avula Award Candidate Fabrication of High Efficiency Single Halide Lead Perovskite Solar cells by Sandwich Deposition Technique
Teja Avula;Ching-fuh Lin

In this research, we discuss the sandwich deposition technique and its influence on efficiency of perovskite solar cells. The CH3NH3PbI3 perovskite film of the optimal thermal annealing temperature for 50mins would significantly yield higher short circuit current density (Jsc) = 22.88mA/cm2, Voc = 0.87V, FF = 74.24 and PCE=14.93%, respectively.

Paper No.  2017-THU-P0901-P006
Wei-Lien Wang Award Candidate Current-Matching Improvement of Triple-Junction GaAs Solar Cells Using Ag NPs on Matrix-Patterns TiO2 Space Layer
Wei-Lien Wang;Wen-Jeng Ho;Jheng-Jie Liu

This study reports the photovoltaic performance-enhancement of triple-junction GaAs solar cells due to current-matched improving by silver nanoparticles (Ag-NPs) on a matrix-pattern TiO2 space layer. The enhanced efficiency from 22.15% to 23.37% due to current-matched improving was obtained for cell with Ag-NPs a matrix-pattern TiO2 with 60% coverage level.

Paper No.  2017-THU-P0901-P007
Chia-Hsun Chen Award Candidate Nanostructure Molybdenum Trioxide Layer for Efficient Organic Solar Cell
Chien-Liang Lin;Tien-Lung Chiu;Chia-Hsun Chen;Jiun-Haw Lee

A nanostructure molybdenum trioxide (MoO3) layer could be formed and controlled by varying deposition rate during film deposition. Using two step deposition (1 Å/s and 0.5 Å/s) to form a nanostructure MoO3 layer as the anodic buffer layer, with this, the organic solar cell performed an improved power conversion efficiency.

Paper No.  2017-THU-P0901-P008
Yu-Cheng Kao Award Candidate Processing development and properties study of parallel-type thin film GaAs solar cells
Yu-Cheng Kao;Yu-Han Fu;Dong-Sing Wuu;Ray-Hua Horng

The substrate of solar cell was transferred from GaAs to Ni, in order to manufacture thin photovoltaic devices. The SiO2 passivation was deposited on the channels between cells to prevent the leakage current. Finally, the bus bars on the solar cells were connected via the metal deposition.