Session Index

Thin-Film Technology and Optical Engineering

Thin-film Deposition
Thursday, Dec. 7, 2017  13:00-14:45
Presider: Sheng-Hui Chen
Room: International Research Building IR1002(1F)
Notes:
13:00 - 13:30 Paper No.  2017-THU-S1001-I001
Invited Speaker:
Cheng Chung Lee
Application of quantum dots on the optical interference coatings
Cheng Chung Lee

The preparation of quantum dots, ODs, and it application to solar cell and high reflector will be demonstrated. The extra photons formed by QDs emission are utilized for generating extra charge carriers in devices (0.5%~2% at each wavelength). The reflectors with QDs are greater than 100% which is higher than the limitation of the conventional quarter wave stack.

 
 
13:30 - 13:45 Paper No.  2017-THU-S1001-O001
Ying-Xiang Liao Award Candidate Structural, Optical and Properties of Aluminum Silicon Nitride Films Deposited by Bipolar Pulsed Magnetron Sputtering
Ying-Xiang Liao;Guan-Jun Liu;Chien-Jen Tang;Chun-Lin Tien;Cheng-Chung Jaing;Shih-Chin Lin

The Aluminum Silicon nitride films were deposited by bipolar asymmetry pulsed magnetron sputtering. The refractive indices, extinction coefficients, hardness, residual stress and elementary analysis of Aluminum Silicon nitride films were analyzed via spectroscopy, nanoindenter and Twyman-Green interferometer, electron spectroscope for chemical analysis.

 
 
13:45 - 14:00 Paper No.  2017-THU-S1001-O002
TSAI SI HAN Thermal annealing effect on material and photoelectric characteristics of ZnGa2O4 epilayer grown by MOCVD
TSAI SI HAN;HUANG CHIUNG YI;HORNG RAY HUA

As grown ZnGa2O4 epitaxial film grown on (0001) sapphire by metal organic chemical vapor deposition (MOCVD) has many defects leading to high leakage current. Post growth high temperature furnace annealing enhanced the crystallinity and improved photoelectric characteristics. This result indicate ZnGa2O4 is a promising candidate for DUV optoelectronic devices.

 
 
14:00 - 14:15 Paper No.  2017-THU-S1001-O003
Hsu Sun Two-Dimensional Antimonene Prepared by Molecular Beam Epitaxy
Hsu Sun;Hsuan-An Chen;Chien-Chung Lin;Shih-Yen Lin

Single-crystal antimonene clusters are obtained on sapphire substrates for the sample with thick film thicknesses at 150 oC by using MBE. For the sample with thinner film thicknesses grown at room temperature, single-crystal antimonene clusters can be obtained after an additional post-growth annealing procedure at 300 oC.

 
 
14:15 - 14:30 Paper No.  2017-THU-S1001-O004
Hong-Yi Lin Effect of Sputtering Power on Optical and Electrical Properties and Residual Stress of ITO Thin Films Deposited by RF Magnetron Sputtering Technique
Hong-Yi Lin;Chuen-Lin Tien;Kuan-Po Chen;Yu-Ying Hsu

Indium tin oxide (ITO) thin films were grown on glass substrates using RF magnetron sputtering technique. The optical and electrical properties, residual stress, and surface roughness at different sputtering powers were investigated. Results showed that the optimum properties of ITO films were obtained at RF power of 60 W.

 
 
14:30 - 14:45 Paper No.  2017-THU-S1001-O005
Soumen Mazumder Optimized AlN epitaxy parameter under 1180 ℃ by low-pressure metal organic chemical vapor deposition on AlN template
Tsung-Yen Liu;Soumen Mazumder;Yu-Tsung Liao;Po-Jen Hsieh;Chieh-Hsiung Kuan;Ray-Ming Lin

We have succeeded to find out an optimized parameter grown the AlN buffer on the sputtered AlN template by low-pressure metal organic chemical vapor deposition (MOCVD) under 1180℃. The full widths at half maxima (FWHM) are 64.8 and 273.6 arcsec for the X-ray diffraction ω-scan (002) and (102) reflection, respectively.