Session Index

Thin-Film Technology and Optical Engineering

Thin-film Process
Thursday, Dec. 7, 2017  15:15-17:00
Presider: Wan-Shao Tsai
Room: International Research Building IR1002(1F)
15:15 - 15:30 Paper No.  2017-THU-S1002-O001
HAN MING WU Award Candidate Flexible InGaN LED Separated from Silicon Substrate

InGaN LED was grown and fabricated on the Si(111) substrate. InGaN LED has been demonstrated through an electrochemical lift-off process. The optical properties of the InGaN membrane was analyzed through the electroluminescence spectra. Furthermore, the influence of stress on electroluminescence spectra was investigated by bending up and down the membranes.

15:30 - 15:45 Paper No.  2017-THU-S1002-O002
Hong-Yi Lin Influence of RF and Microwave Plasma Treatments on the Surface Roughness of BK7 Glass
Hong-Yi Lin;Chuen-Lin Tien;Chih-Kai Chang;Kuan-Po Chen

We use P400 grit sand paper, RF and microwave plasma etching for surface roughness treatments on the BK7 glass. The surface roughness values of BK7 glass with different treatments were measured by different instruments. The results show that microwave plasma etching can remarkably change the surface roughness.

15:45 - 16:00 Paper No.  2017-THU-S1002-O003
Kuan-Po Chen Fabrication of Rugate Filters with Residual Stress Simulation and Measurement
Kuan-Po Chen;Hong-Yi Lin;Chuen-Lin Tien;Yu-Ying Hsu;Chien-Jen Tang

A single-band and three-band rugate filters were designed and fabricated. The rugate filters was prepared by high power impulsed magnetron sputtering method. The measured transmission spectra were similar to the original designs. The residual stress of the rugate filters was measured by a Twyman-Green interferometer .

16:00 - 16:15 Paper No.  2017-THU-S1002-O004
CHING-CHE Lin Loading effect–induced broadband perfect absorber based on single-layer structured metal film
CHING-CHE Lin;Keng-Te Lin;Hsuen–Li Chen;Yu-Sheng Lai;Chen-Chieh Yua;Yang-Chun Lee;Pao-Yun Su;Yu-Ting Yen;Bo-Yi Chen

A broadband perfect absorber based on loading effect–induced single-layer/trench-like thin metallic (LISTTM) structures is demonstrated. LISTTM structures take advantage of surface plasmon resonance and three-dimensional cavity effects to provide efficient absorption. The loading effects, which were generated during the etching and deposition processes, further improved the maximum absorption.

16:15 - 16:30 Paper No.  2017-THU-S1002-O005
Yu-Wei Zhang Layer-number Controllable and Large-area MoSe2 Grown by using Selenization of Transition Metal Films
Yu-Wei Zhang;Chong-Rong Wu;Yi-Jia Chen;Shih-Yen Lin

Through the selenization of pre-deposited Mo films, large-area and layer-number controllable MoSe2 films can be prepared. Different 2D materials MoS2 and MoSe2 fabricated through similar sulfurization and selenization procedures of Mo films have opened up the possibility of stacking different groups of 2D materials for hetero-structure establishment.