Session Index

Thin-Film Technology and Optical Engineering

Poster Session III
Friday, Dec. 8, 2017  12:30-14:00
Presider: -
Room: International Research Building 5F
Notes:
Paper No.  2017-FRI-P1003-P001
Syuan-ye Chen Research on p-type ZnO by Ag Compounds Diffusion
Syuan-ye Chen

In this study, a p-type ZnO were realized by Ag compounds diffusion on n-type ZnO with rapid thermal annealing. The optimal p-type ZnO films show the resistivity of 0.0537 Ω-cm, a Hall mobility of 0.706 cm2/ν-s, and bulk concentration of 1.82E+20 was achieved.

 
 
Paper No.  2017-FRI-P1003-P002
Yi-Xuan Chen Contact Angles of UV-treated ZnO and NOA65 Films
Yi-Xuan Chen;Hui-Wen Li;Jy-shan Hsu

In order to understand the low voltages of ZnO doped PDLC, the effects of UV exposure time and thickness on the contact angles of ZnO and NOA65 films are investigated, respectively. The contact angles are almost the same as time increases and increases as the thickness of NOA65 films increases.

 
 
Paper No.  2017-FRI-P1003-P003
Wen-Hao Lee Development of In-situ Monitoring System for Semiconductor Process
Wen-Hao Lee;Ju-Yi Lee

We developed an in-situ monitoring system for semiconductor process, which used to measure the temperature of wafer surface and the parameters of thin film. In temperature measurement, we developed different radiation wavelength for different process. The comparing results with commercial equipment, the differences are less than 1%.

 
 
Paper No.  2017-FRI-P1003-P004
Wei-De Wu The enhanced optoelectronic properties on Al-doped ZnO layer by Intermittent Process treatment
Wei-De Wu;Ling-Yu Kuo;Yen-Sheng Lin

In this study, the “Intermittent Process” is designed to enhance optoelectronic properties of AZO thin film,which is defined as the intermittent time was inserted to form multiple layers during growing thin film. In our study, the IP is verified to enhance the optoelectronic properties of AZO thin film effectively.

 
 
Paper No.  2017-FRI-P1003-P005
Hsin-Ying Lee Performances of VOx-based Microbolometers
Li-Han Kao;Yen-Ting Liu;Tsung-Han Yeh;Hsin-Ying Lee

The floating-type VOx microbolometers with interferometric structure and absorption layer were fabricated. At a bias current of 1 µA, the responsivity, thermal time constant, and thermal conductivity of VOx microbolometers with interferometric structure and Cr absorption layer were 568.19 kV/W, 4.39 ms and 6.27×10^-8 W/K, respectively.

 
 
Paper No.  2017-FRI-P1003-P006
Wei-Shan Fan Analysis on optical and mechanical properties of Mo-AlN cermet coatings prepared by hybrid HIPIMS/DC magnetron co-sputtering
Chien-Jen Tang;Wei-Shan Fan;Ying-Xiang Liao;Cheng-Chung Jaing;Chun-Lin Tien

In this paper, we investigate Mo-AlN cermet composite films with various proportions of Mo metal deposited by hybrid HIPIMS/DC magnetron co-sputtering system. The optical constant and residual stress of Mo-AlN films were analyzed.

 
 
Paper No.  2017-FRI-P1003-P007
Kenji Masuyama Mechanical Characteristics of SiO2 Optical Thin Films Obtained by Combination Coating Method
Kenji Masuyama;Hiroshi Mutontani

A combination coating method using sputtering and electron beam deposition was used to fabricate SiO2 optical thin films and abrasion tests were conducted to evaluate their mechanical properties. The abrasion test results demonstrated that the combination coating method shows promise for practical applications.

 
 
Paper No.  2017-FRI-P1003-P008
Peicheng Fang The Time-evolution of Nonlinear optical properties of ZnO nanoparticles
Peicheng Fang;Zan-Jhih Wang;TAI-CHUN HAN;Tzu-Fang Hsu

The nonlinear optical behavior of ZnO nanoparticles with 10 nm particle size have been observed by z-scan technique. Time-resolved Z-scan system was introduced in this experiment. It is found that the ZnO nanoparticles would suffer from thermal lens after having illuminated 1.30 ms.

 
 
Paper No.  2017-FRI-P1003-P009
Po-Jui Huang High sensitivity Silicon-Based Schottky IR Photodetector
Po-Jui Huang;Hung-Chieh Chuang;Yu-Hsiang Lin;Wei-Che Chang;Ching-Fuh Lin

Using the Si-based Schottky diode as IR photodetector, and through the material, device structure, and operation bias selection, we can get the high response and fast switching IR photodetector at the wavelength beyond 1200 nm, and the response can reach 1269.3 nm/mW.

 
 
Paper No.  2017-FRI-P1003-P010
Yu-Cheng Syu The fluorescence luminescence of sodium iodide irradiated by UV light
Yu-Cheng Syu;Jin-Cherng Hsu

Sodium iodide film is firstly analyzed by fluorescence luminescence irradiated with UV light. The luminous efficiency is increased by co-evaporting alittte amount of cesium iodide. We deposited sequentially a protective parylene-N layer on the film to prevent the film from moisture, and analyze the film’s crystal structure by XRD.

 
 
Paper No.  2017-FRI-P1003-P011
Ming-Chung Liu Effect of 4000K LED light properties with edge filter
Ming-Chung Liu;Chi-Chun Huang;Hsiao-Wen Tu

The purpose of the research was to explore the effect toward the properties of light by adhering long-wave-pass edge filter with different cut-off wavelengths on the 4000K LED light source and simulate light source with minimum proportion of blue light under same correlated color temperature.

 
 
Paper No.  2017-FRI-P1003-P012
Sheng-Po Chang Influence of High-k Dielectric Improvements on Photo-Electrical Properties of Magnesium Zinc Oxide Thin-Film Transistors
Ming-Hung Hsu;Jyun-Yi Li;Sheng-Po Chang;Shoou-Jinn Chang

MgZnO was deposited to fabricate a TFT via RF sputtering. We deposited alumina as a MgZnO TFT gate insulator layer via the ALD method. The MgZnO TFT with an Al2O3 insulator could exhibit a mobility of 7.73 cm2/Vs, threshold voltage of 4.2 V, and a subthreshold swing of 0.29 V/dec.

 
 
Paper No.  2017-FRI-P1003-P013
Cheng-Chung Jaing Optical and Mechanical Properties of Cr-Si Composite Films
Mao-Qing Xu;Hui-Song Xu;Zi-Qian Huang;Zong-Han Zhuang;Shi-Chun Zhou;Jing-Han Xie;Cheng-Chung Jaing;Yeuh-Yeong Liou;Pang-Shiu Chen

The composition-dependent optical and mechanical properties of Cr-Si composite films prepared by electron-beam evaporation at a substrate temperature of 25 degrees C were investigated with spectrophotometer, spectroscopic ellipsometer, and phase-shifting Fizeau interferometer, respectively. The various compositions were obtained by mixing the starting materials of Cr and Si in a crucible.

 
 
Paper No.  2017-FRI-P1003-P014
Yu-Ting Kao Effects Discussion of different MAI concentration on CH3NH3PbI3 growth morphology and photovoltaic properties of perovskite solar cells
Yu-Ting Kao;Lung-Chien Chen

This study used wet process which involves spray pyrolysis of TiO2-mesoporous and spin coating of CH3NH3I to prepare the perovskite solar cells. As a result, the power conversion efficiency was up to 17.42%, open circuit voltage of 0.97 V, current density of 24.06 mA/cm2 and fill factor of 74.66%.