Session Index

Thin-Film Technology and Optical Engineering

Functional Thin-films  
Friday, Dec. 8, 2017  13:00-14:30
Presider: Hsiang-Chen Wang
Room: International Research Building IR1002(1F)
Notes:
13:00 - 13:30 Paper No.  2017-FRI-S1004-I001
Invited Speaker:
Chang Kwon Hwangbo
Epsilon-Near-Zero Thin Films for Perfect Absorption
Chang Kwon Hwangbo

Epsilon-near-zero (ENZ, for dielectric function close to zero) metamaterials have been studied in various research areas such as wavefront engineering, supercoupling effect, strong coupling, nonlinear optics, and perfect absorption. At an ENZ wavelength at , the normal electric field is very strong and well-confined in an ultra-thin film. Strong enhancement and spatial confinement of electric field induces a large light absorption even in a low loss thin film. In this talk we demonstrate tunable ENZ indium tin oxide (ITO) thin films and broadband perfect absorption using the ITO multilayers at different ENZ wavelengths. Further we propose a new broadband coherent perfect absorption design for optical switching based on ENZ multilayer films.

 
 
13:30 - 13:45 Paper No.  2017-FRI-S1004-O001
Cing-Yu Jian Transferring-free Top-Gate MoS2 Transistors
Cing-Yu Jian;Chong-Rong Wu;Yi-Jia Chen;Shih-Yen Lin

Transferring-free top-gate MoS2 transistors are fabricated. With H2O pretreatment before the dielectric layer growth by ALD, smaller hysteresis and enhanced field-effect mobility values of the transistor are observed, which suggest that there are fewer defects in the dielectric layer with the additional H2O pretreatment on the hydrophobic MoS2 surfaces.

 
 
13:45 - 14:00 Paper No.  2017-FRI-S1004-O002
Shang-Hsiang Shao Graphene Grown Directly on Sapphire Substrates as the Ohmic Contact Electrodes on MoS2
Shang-Hsiang Shao;Hsuan-An Chen;Shih-Yen Lin

In this report, we have demonstrated that bi-layer graphene can be grown directly on sapphire substrates without the assistance of metal catalyst. A growth model is also proposed. Compared with Au/Ti electrodes, Ohmic contact behaviors and ~107 contact resistance reduction is observed for Au/Ti/graphene electrodes on MoS2.

 
 
14:00 - 14:15 Paper No.  2017-FRI-S1004-O003
Pei-Ju Tsai A single type of nanocavity structure enhances light outcouplings from various two-dimensional materials by over a hundred-fold
Pei-Ju Tsai;Husen-Li Chen

A simple two-layer nanocavity was developed to significantly enhance light outcoupling from 2D materials. Using a single type of Ag/SiO2 nanocavity structure, we obtained a 475-fold intensity enhancement of main Raman peaks of single-layer graphene and more than a 350-fold increase of both Raman and PL intensities of single-layer WS2.