Session Index

Thin-Film Technology and Optical Engineering

Poster Session IV
Friday, Dec. 8, 2017  14:30-16:00
Presider: -
Room: International Research Building 5F
Notes:
Paper No.  2017-FRI-P1004-P001
Shih-Hao Chan ZnO thin film prepared by HiPIMS for far-infrared region
Shih-Hao Chan;Tzu-Ting Lin;Shao-Ze Tseng;Chih-Wei Hu;Chia-Yin Chen;Shang-Ying Liao;Bo-Huei Liao;Sheng-Hui Chen

Anti-reflection coating of ZnO thin films were prepared by HiPIMS method on FZ-silicon wafer for far-infrared region. The experiment result demonstrated the transmittance of FTIR spectrum of the FZ-silicon and ZnO thin film were highly transparent. Compared with conventional materials, ZnO is low cost and nontoxic.

 
 
Paper No.  2017-FRI-P1004-P002
Yi-Hao Huang By Using Polar Solvent Produce and Optimize Compound Silver Nanowires Electrodes Applying in Organic Electro-optic Devices
Yi-Hao Huang;Mei-Ying Chang

We used dimethyl sulfoxide (DMSO) to treat the solvent of compound silver nanowires electrodes, and we product by this solvent can performance with sheet resistance 10 (Ω/sq), keeping the average transmittance achieve 76 % in the wavelength of visible light, and the surface RMS is just 10 nm.

 
 
Paper No.  2017-FRI-P1004-P003
Yi-lin Ho Resistive Switching in ZnO Embedded Ⅲ-nitride Nanostructures
Yi-lin Ho;Cheu-che Lin

In this report, we demonstrate a use of ZnO embedded Ⅲ-nitride oxide to p-silicon substrate to achieve bipolar RS operation. This RS can be explained to trap-controlled space charge limited current theory. We observed stabilized high/low resistive switching between 10^5 and 10^3 ohm with endurance above 10^5 cycles.

 
 
Paper No.  2017-FRI-P1004-P004
Jyun-Huei Lin Surface Coating of 3-D LiMn2O4 Cathode Electrode with Metal Oxide by Magnetron Sputtering for All-Solid-State Lithium Battery
Jyun-Huei Lin;Hsi-Chao Chen;Yun-Cheng Yeh;Cing-Long Lyu;Yi-Ren Chen

Spinel lithium manganese oxide has been synthesized by co-precipitation, and as the temperatures of calcined increases, the crystallization of LiMn2O4 is sputtering with metal oxide to enhance the electronic property. In addition, calcined and modified LiMn2O4 had been investigated by scanning electron microscopy and Raman spectra.

 
 
Paper No.  2017-FRI-P1004-P005
Wei-Hao Huang A Polydopamine-modified LSPR Sensor Using Au Nanoparticles for Environmental Sensing
Wei-Hao Huang;Hsueh-Tao Chou;Tien-Ming Wu;Yi-Keng Yu

In this study, Au nanoparticles were fabricated by using photochemical method, and AuNPs film was modified by polydopamine. Finally, PDA/AuNPs film was applied in environmental sensing.The results indicate that PDA/AuNPs film shows a sensitivity of 49.9 nm/RIU and a linearity of R2 = 0.998 for the environmental sensing.

 
 
Paper No.  2017-FRI-P1004-P006
Chun-An Chen Photocatalytic Study of Annealed CaZnO
Chun-An Chen;Che-Chi Lee;Cheng-Lung Chen;Wen-Jen Lin;Kuo-Jen Chang;David Jui-Yang Feng;Yi-Jen Chiu;Yung-Jr Hung;Wen-How Lan

Calcium zinc oxide CaZnO were prepared by spray pyrolysis. Eeffect of annealing for the films was studied. With photoluminescence analysis, the defect-related emission spectra were identified. The photocatalytic reactivity of these films was examined. The film with 800oC annealing process shows the high photocatalytic ability.

 
 
Paper No.  2017-FRI-P1004-P007
En-Yu Lin The Effects of Annealing Parameters on Cu2ZnSnS4(CZTS) Absorber Layers
En-Yu Lin;Jui-Fu Yang;I-Fang Lai;Shou-Yi Kuo

Synthesis of Cu2ZnSnS4 thin film solar cells by sulfurization of thermal evaporation method Sn/Zn/Cu precursors is studied. Heating rate plays an important role on the performance of CZTS absorber layers.

 
 
Paper No.  2017-FRI-P1004-P008
Cheng-Chung Jaing Optical Properties of Thin Sputtered Silver Films from 10 nm to 100 nm
Chun-Wei Huang;Cheng-Chung Lee;Cheng-Chung Jaing

The thickness-dependent optical constants of thin silver films from 10 nm to 100 nm prepared by sputtering deposition were investigated with spectroscopic ellipsometry. A neutral beam splitter for p-polarized light at an incident angle of 45 degrees was designed and fabricated with the optical constants of the examined silver film.

 
 
Paper No.  2017-FRI-P1004-P009
Chang-Hau Chen Mathematical simulation of color blindness for notch filter design
Chang-Hau Chen;Chih-Yu Tsai;Hsiao-Ching Yu

Colorblind glass design for individual persons is our ultimate aim and the goal relies on several aspects: optical notch filter, mathematical models, and initial data input. Moreover, a mathematical model for color blind glass design strongly depends on the types of a color vision deficiency.

 
 
Paper No.  2017-FRI-P1004-P010
Bo-Yen Lin Organic light-emitting diode under alternating current driving
Bo-Yen Lin;Jiun-Haw Lee;Tien-Lung Chiu;Chi-Feng Lin

OLEDs based on Alq3 were fabricated and driven by AC driving of various repetition rate. Higher luminance and current density was obtained as the repetition rate was faster. We suggested such phenomenon resulted from trapped charge effect in the device.

 
 
Paper No.  2017-FRI-P1004-P011
Saki Narita Stable deposition of CeO2 optical thin films using mixed materials
Saki Narita;Hiroshi Murotani

The conditions for electron-beam deposition of a CeO2 film were investigated using a mixed material of CeO2 and CeF3. Mixing in CeF3 did not improve the optical properties of the film, but did improve its mechanical properties and the stability of the film deposition rate.

 
 
Paper No.  2017-FRI-P1004-P012
Lin Zheng Guo Lateral graphene-based pn diode fabrication by nitrogen plasma treatment
Lin Zheng Guo;Wan Ting Yang;Zhen Wei Lui;Kuei Yi Lee

Modulating electrical properties of graphene is an important topic. In this study, we formed graphene by chemical vapor deposition (CVD) on copper foils and then treated using nitrogen plasma to change the semiconductor properties. The diode properties of p-n junction via nitrogen treatment were observed.

 
 
Paper No.  2017-FRI-P1004-P013
Chien-Ting Chen The enhanced optoelectronic property on the Al-doped ZnO layer deposited on flexible substrate by optimum thermal treatment on self-buffer layer
Chien-Ting Chen;Hong-Jian Guo;Yen-Sheng Lin

In this study, the 80 nm AZO thin films were deposited on flexible substrate by RF sputtering. At first, the 30nm AZO layer was deposited as self-buffer layer, and then the different low temperature annealing as 50℃、70℃、90℃ for 3 minutes had been done to improve the quality of thin films.

 
 
Paper No.  2017-FRI-P1004-P014
Wan-Ting Ke CMOS Process Compatible Visible-blind Ultraviolet Phototransistors
Yu-Ting Wang;Wan-Ting Ke;Tsung-Ting Wu;Ming-Chang M. Lee

We propose a device structure of integrating metal-dielectric-metal Fabry–Perot bandpass filter on an interdigitated Si lateral bipolar phototransistors. It has low dark current and high UV responsivity. The maximum optical transmittance is 0.56 at the wavelength 332nm, and the FWHM of transmission is 78.6nm.